Gallium arsenide is a compound of the elements gallium and arsenic. It is a III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits(ICs) for point-to-point radio and satellite communications, monolithic microwave integrated circuits,infrared light-emitting diodes, laser diodes, solar cells and optical windows. It is often used in substrate and epitaxial material.

PAM-XIAMEN offers gallium arsenide substrate and its relative epitaxial material as follows:

Indium gallium arsenide
Gallium arsenide phosphide
Gallium arsenide nitride
Indium gallium arsenide phosphide
Aluminium gallium arsenide phosphide

Indium gallium arsenide nitride

Aluminium gallium arsenide nitride

Low temperature gallium arsenide on gallium arsenide substrate

Gallium arsenide based LED wafer

No.1 AlxGa1-xAs: direct band gap for x<0.4 (corresponding to 1.42–1.95 eV); can be lattice-matched to GaAs substrate over entire composition range; tends to oxidize; n-doping with Si, Se, Te; p-doping with Zn, C, Be, Mg. Can be used for infrared laser diodes. Used as a barrier layer in GaAs devices to confine electrons to GaAs (see e.g. QWIP). AlGaAs with composition close to AlAs is almost transparent to sunlight. Used in GaAs/AlGaAs solar cells.
No.2  InxGa1-xAs: Well-developed material. Can be lattice matched to InP substrates. Use in infrared technology and thermophotovoltaics. Indium content determines charge carrier density. For x=0.015, InGaAs perfectly lattice-matches germanium; can be used in multijunction photovoltaic cells. Used in infrared sensors, avalanche photodiodes, laser diodes, optical fiber communication detectors, and short-wavelength infrared cameras.
No.3  InxGa1-xP: used for HEMT and HBT structures and high-efficiency multijunction solar cells for e.g. satellites. Ga0.5In0.5P is almost lattice-matched to GaAs, with AlGaIn used for quantum wells for red lasers.
No.4  AlxIn1-xAsBuffer layer in metamorphic HEMT transistors, adjusting lattice constant between GaAs substrate and GaInAs channel. Can form layered heterostructures acting as quantum wells, in e.g. quantum cascade lasers.
No.5  GaAsPUsed in red, orange and yellow LEDs. Often grown on GaP. Can be doped with nitrogen.

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