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Gallium Arsenide is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GALLIUMARSENIDE  provide you Gallium Arsenide material for your research and industry purpose as follows:

Gallium Arsenide substrate

1)2",3",4"(GaAs) Gallium Arsenide Wafers

Conduction Type:n-type/p-type

Growth Method:VGF

Dopant:Silicon/Zn

Crystal Orientation:(100)20/60/150 off (110)

Carrier Concentration:(0.4~2.5)E18/cm3

Resistivity at RT:(1.5~9)E-3 Ohm.cm

Mobility:1500~3000cm2/V.sec

Etch Pit Density:<5000/cm2

Thickness:220~500um

Surface Finish:P/E or P/P

Packaging：Single wafer container or cassette 2)2",3",4"(GaAs) Gallium Arsenide Wafers,Semi-insulating Conduction Type:Insulating Growth Method:VGF Dopant:Undoped Crystal Orientation:(100)+/- 0.5° Carrier Concentration:n/a Resistivity at RT:>1E7 Ohm.cm Mobility:>5000 cm2/V.sec Etch Pit Density:<8000 /cm2 Thickness:350~675um Surface Finish: P/P Packaging：Single wafer container or cassette 3)6" (GaAs)Gallium Arsenide Wafers,Semi-insulating Conduction Type:Semi-insulating Growth Method:VGF Dopant:Undoped Crystal Orientation(100)0°±3.0° Carrier Concentration:n/a Resistivity at RT:>1E7 Ohm.cm Mobility:n/a Etch Pit Density:<8000 /cm2 Thickness:350~675um Surface Finish: P/P Packaging：Single wafer container or cassette 4)2" LT-GaAs  Thickness：1-2um or 2-3um Resistivity(300K)：>108 Ohm-cm Polishing：Single side polished (GaAs)Gallium Arsenide Wafers for LED/LD/Microelectronics/ Applications, t class="font7">：Single wafer container or cassette Low temperature Gallium Arsenide epi layer on Gallium  Arsenide substrate   Gallium Arsenide Schottky Diode Epitaxial Wafers Indium  Gallium Arsenide/InP epi wafer for PIN InP/Indium Gallium Arsenide/InP epi wafer New Indium Gallium Arsenide Structure Wafer AlGaP/Gallium Arsenide Epi Wafer for Solar Cell   Gallium Arsenide Epitaxy  Gallium Arsenide  PIN epi wafer Gallium Arsenide/Aluminium Gallium Arsenide/Gallium Arsenide  epi wafer  Gallium Arsenide Based Epitaxial Wafer for LED and LD AlGaInP epi wafer Gallium Arsenide HEMT epi wafer Gallium Arsenide pHEMT epi wafer  Gallium Arsenide mHEMT epi wafer  Gallium Arsenide HBT epi wafer Relative products: gallium arsenide properties gallium arsenide phosphide gallium arsenide msds gallium arsenide refractive index gallium arsenide dielectric constant Source: PAM-XIAMEN If you need more information about  Gallium Arsenide, please visit our website:www.powerwaywafer.com. send us email at powerwaymaterial@gmail.com.