Gallium Arsenide is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GALLIUMARSENIDE  provide you Gallium Arsenide material for your research and industry purpose as follows:

Gallium Arsenide substrate
Low temperature 
Gallium Arsenide epi layer on Gallium  Arsenide substrate  
Gallium Arsenide Schottky Diode Epitaxial Wafers
Gallium Arsenide/InP epi wafer for PIN
Gallium Arsenide/InP epi wafer
New Indium 
Gallium Arsenide Structure Wafer 
Gallium Arsenide Epi Wafer for Solar Cell  
Gallium Arsenide Epitaxy 
Gallium Arsenide  PIN epi wafer
Gallium Arsenide/Aluminium Gallium Arsenide/Gallium Arsenide  epi wafer 
Gallium Arsenide Based Epitaxial Wafer for LED and LD
AlGaInP epi wafer

Gallium Arsenide HEMT epi wafer
Gallium Arsenide pHEMT epi wafer 
Gallium Arsenide mHEMT epi wafer 
Gallium Arsenide HBT epi wafer 

Relative products:

gallium arsenide properties
gallium arsenide phosphide
gallium arsenide msds
gallium arsenide refractive index
gallium arsenide dielectric constant


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