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Gallium Arsenide is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GALLIUMARSENIDE  provide you Gallium Arsenide material for your research and industry purpose as follows:

Gallium Arsenide substrate

1)2",3",4"(GaAs) Gallium Arsenide Wafers
Conduction Type:n-type/p-type
Growth Method:VGF
Dopant:Silicon/Zn 
Crystal Orientation:(100)20/60/150 off (110)
Carrier Concentration:(0.4~2.5)E18/cm3
Resistivity at RT:(1.5~9)E-3 Ohm.cm
Mobility:1500~3000cm2/V.sec
Etch Pit Density:<5000/cm2
Thickness:220~500um
Surface Finish:P/E or P/P
PackagingSingle wafer container or cassette

2)2",3",4"(GaAs) Gallium Arsenide Wafers,Semi-insulating
Conduction Type:Insulating
Growth Method:VGF
Dopant:Undoped
Crystal Orientation:(100)+/- 0.5°
Carrier Concentration:n/a
Resistivity at RT:>1E7 Ohm.cm
Mobility:>5000 cm2/V.sec
Etch Pit Density:<8000 /cm2
Thickness:350~675um
Surface Finish: P/P
PackagingSingle wafer container or cassette

3)6" (GaAs)Gallium Arsenide Wafers,Semi-insulating
Conduction Type:Semi-insulating
Growth Method:VGF
Dopant:Undoped
Type:N
Crystal Orientation(100)0°±3.0°
Carrier Concentration:n/a
Resistivity at RT:>1E7 Ohm.cm
Mobility:n/a
Etch Pit Density:<8000 /cm2
Thickness:350~675um
Surface Finish: P/P
PackagingSingle wafer container or cassette

4)2" LT-GaAs 
Thickness1-2um or 2-3um
Resistivity(300K)>108 Ohm-cm
PolishingSingle side polished
(GaAs)Gallium Arsenide Wafers for LED/LD/Microelectronics/ Applications,
t class="font7">:Single wafer container or cassette

Low temperature Gallium Arsenide epi layer on Gallium  Arsenide substrate  
Gallium Arsenide Schottky Diode Epitaxial Wafers
Indium 
Gallium Arsenide/InP epi wafer for PIN
InP/Indium 
Gallium Arsenide/InP epi wafer
New Indium 
Gallium Arsenide Structure Wafer 
AlGaP/
Gallium Arsenide Epi Wafer for Solar Cell  
Gallium Arsenide Epitaxy 
Gallium Arsenide  PIN epi wafer
Gallium Arsenide/Aluminium Gallium Arsenide/Gallium Arsenide  epi wafer 
Gallium Arsenide Based Epitaxial Wafer for LED and LD
AlGaInP epi wafer


Gallium Arsenide HEMT epi wafer
Gallium Arsenide pHEMT epi wafer 
Gallium Arsenide mHEMT epi wafer 
Gallium Arsenide HBT epi wafer 


Relative products:

gallium arsenide properties
gallium arsenide phosphide
gallium arsenide msds
gallium arsenide refractive index
gallium arsenide dielectric constant


Source: PAM-XIAMEN

If you need more information about  Gallium Arsenide, please visit our website:www.powerwaywafer.com. send us email at powerwaymaterial@gmail.com.