Gallium Arsenide Phosphide Schottky Barrier Field Effect Transistor

Fabrication processes have been developed for gallium arsenide phosphide Schottky‐barrier field effect transistor (SBFET) on an insulating gallium arsenide substrate. Process techniques as well as results of electrical characterization of the device structure including the  interface are described. Formation of a conductive layer near the  interface is postulated, and an anlaysis of its effects on transistor characteristics is presented.

Source:IOPscience

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