Gallium Arsenide Films on Tungsten/Graphite Substrates

Gallium arsenide films have been deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow system. The effects of substrate temperature and reactant composition on the deposition rate and structural and electrical properties of gallium arsenide films have been investigated, Preliminary work on thin film gallium arsenide solar cells has also been carried out.

Source:IOPscience

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