2019年12月25日星期三

Selective Epitaxial Deposition of Gallium Arsenide in Holes

Epitaxial deposition of gallium arsenide in holes etched into gallium arsenide substrates was investigated. Single crystal deposits with excellent surfaces were obtained. The effect of substrate orientation on the degree of lateral overgrowth above the substrate surface was studied. Depositions in {100} oriented substrates produce faceted deposits, whose upper surfaces are several microns above the substrate surface. Epitaxial hole deposits with surfaces level with or nearly level with the substrate surface are obtained with accurately oriented {111}‐B substrates.

 Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,
发帖者 时间：

1 条评论:

  1. yankabdella2022年3月3日 18:32

    Mohegan Sun at Pocono Downs adds 'Casino Nights' to
    The casino-themed show will 부천 출장안마 be part of the “Casino Nights” 과천 출장마사지 series, which also features live 강릉 출장샵 action, and also in a special place 안양 출장안마 called Mohegan Sun at Pocono 경상남도 출장샵

    回复删除

订阅： 博文评论 (Atom)