Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion)

The effect of the cold working treatment on the characteristics of GaAs crystals was studied. Abrasion and subsequent heat treatment of the crystals decrease the carrier concentrations and increase the breakdown voltages. After abrading and subsequent heat treatment, the increase in etch-pit density in the crystals was observed. It is supposed that the degradation of the crystals was related to the generation of dislocations during such treatments.



Source:IOPscience

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