An investigation was made of the laser action
in compensated gallium arsenide doped with donors (Te or Sn) and acceptors
(Zn). Such doping reduced considerably the threshold current density and the
working voltage of electron-beam-pumped lasers. The lowest values of the
threshold were 0.1 A/cm2 at T≈85°K and 1.5 A/cm2 at T≈300°K. The
maximum efficiency reached 30% at T≈85°K and
21% at T≈300°K. A waveguide resonator structure ensured that these
values of the threshold current and the efficiency were not affected when the
electron energy was reduced from 50 keV to ~25 keV. A further redution of the
electron energy to 9 keV caused the threshold current density to rise to 1.5
A/cm2 at T≈85°K.
Source:IOPscience
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