A method of producing and investigating
trapping effects in semiconductors and insulators has been devised which uses
the variation of applied electric field strength during the measurement of
thermally stimulated conductivity. Experiments on chromium-, oxygen-, and
iron-doped semi-insulating gallium arsenide crystals have shown that a change
in the electric field may shift existing peaks, excite new peaks, or induce the
enhancement, broadening, narrowing or quenching of the existing peaks in the
thermally stimulated conductivity spectrum. At relatively high fields, current
instabilities were sometimes observed in the region of a peak. It is suggested
that these changes are caused mainly by the modification of the capture cross
section of the traps.
Source:IOPscience
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