Gallium arsenide surfaces after laser-induced
thermochemical etching in a CCl4 atmosphere were investigated by Auger electron
spectroscopy. The laser-etched surfaces were deficient in arsenic and the
excess gallium was found in a depth down to 20 nm from the etched surface for a
laser power from 0.3 to 0.5 W at a scan speed of 6-30 µm/s. The thickness of
the arsenic-deficient layers depended on both laser power and scan speed.
Source:IOPscience
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