2019年6月14日星期五

Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching

Gallium arsenide surfaces after laser-induced thermochemical etching in a CCl4 atmosphere were investigated by Auger electron spectroscopy. The laser-etched surfaces were deficient in arsenic and the excess gallium was found in a depth down to 20 nm from the etched surface for a laser power from 0.3 to 0.5 W at a scan speed of 6-30 µm/s. The thickness of the arsenic-deficient layers depended on both laser power and scan speed.



Source:IOPscience

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