Infra-red reflection measurements have been
performed on specimens of n-type epitaxial gallium arsenide in the spectral
range 10-200 cm−1. From measurements of the wavelength position of the plasma
absorption edge the carrier concentration in these samples has been determined,
using a calibration curve produced by measurements on bulk single-crystal
samples of known concentration - between 1015 and 1017 carriers/cm3.
Source:IOPscience
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