A method for selective substrate removal from thin p-type gallium arsenide layers

A two-stage etching technique enables the substrates to be removed from thin p-type layers of gallium arsenide over large areas. An n-type 'blocking layer' is used to retard the etching front during the selective first stage and this is subsequently removed using a nonselective etch. Greater precision is offered by this method than by conventional etching techniques.

Source:IOPscience

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