The resistivity against dose curve in neutron
irradiated gallium arsenide shows an anomaly. At doses in excess of 1017 n cm-2
the resistivity decreases with dose. The temperature dependence of resistivity
indicates that the mechanism of conduction at high doses is tunnel assisted
hopping. Since the structural studies reveal that even at the highest dose the
material remains substantially crystalline the tunnel assisted hopping is
considered to occur via defect energy levels.
Source:IOPscience
For more information, please visit our website: www.semiconductorwafers.net,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
没有评论:
发表评论