In the experiments on the etched
surface of gallium arsenide were performed. We studied the effect of BCl3 gas
flow rate on the thickness of the etched layer. GaAs etching rate was: 537,4
nm/min 28,7 nm/min 2,6 nm/min, the values of the flow rate of BCl3 NBCl3 - 15,
10, 5 cc/min, respectively. The effect of BCl3 gas flow rate to the mean-square
roughness of the etched surface. The influence of the anisotropy of the process
on the geometry of the etched area. Revealed that the deflection angle for the
samples treated with the working gas flow rate NBCl3 - 15 cc/min in the [110]
direction was α [110] = 65,5° in direction [111] was α [111] = 45,58°. For
samples treated with the working gas flow rate NBCl3 - 10 cc/min in the [110]
direction was α [110] = 20,94° in direction [111] was α [111] = 11,37°. For
samples treated with the working gas flow rate NBCl3 - 5 cc/min in the [110]
was α [110] = 0,32° in direction [111] was α [111] = 0,21°. The results can be
used to produce discrete diodes, heterojunction devices, and other results.
Source:IOPscience
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