We performed a theoretical
investigation on the atomic structure of {111} glide partial dislocations in
gallium arsenide. The calculations were carried out using ab initio total
energy methods, based on the density functional theory and the pseudopotential
model. We addressed the microscopic structure of the 90° partial and the 30°
partial dislocations. Our results show that the atomic configurations of the
dislocation cores are similar to those proposed for the same dislocations in
non-polar semiconductors. For the 90° partial, the double-period reconstruction
is energetically more favourable than the single-period reconstruction. In
addition, we computed the interaction of intrinsic defects with the dislocation
cores.
Source:IOPscience
For more information, please visit our website: www.semiconductorwafers.net,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
没有评论:
发表评论