The Properties of the Interface between Gallium Arsenide and Silicon Oxides

The MOS characteristics of gallium arsenide were investigated using silicon monoxide and dioxide as insulators. The band scheme was nearly flat at the surface of gallium arsenide covered by these oxides. At the interface, there were several kinds of surface state whose levels were located at 0.05, 0.2, 0.4, 0.55 and 0.65 eV below the conduction band edge respectively. Densities of these states were estimated as about 2~5×1011/cm2.

Source:IOPscience

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