Photoluminescence from epitaxial and polycrystalline layers of gallium arsenide

Photoluminescence has been observed from layers of zinc-doped gallium arsenide, grown by vapour transport both epitaxially on single-crystal gallium arsenide and as polycrystalline layers on sapphire substrates. The correlation between the wavelength of maximum photoluminescence and the hole concentration is in agreement with previous work on single crystals. The technique can be used for the measurement of doping levels in single-crystal or polycrystalline material, over the doping range 1018 to 1020 cm−3, accurate to within a factor of three.

Source:IOPscience

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