2018年11月12日星期一

MIT Makes Smallest Gallium Arsenide Transistor



Engineers at MIT say they’ve invented the smallest MOSFET transistor yet made from indium gallium arsenide. The transistor is just 22 nanometers long, according to a press release. The researchers hope this proves that such transistors will be ready to take over when Moore’s Law starts to sputter.

“We have shown that you can make extremely small indium gallium arsenide MOSFETs with excellent logic characteristics, which promises to take Moore’s Law beyond the reach of silicon,” says Jesús del Alamo, the electrical engineering and computer science professor who co-developed the transistor with graduate student Jianqian Lin and electrical engineering professor Dimitri Antoniadis. They described the work this week in San Francisco at the IEEE International Electron Devices Meeting (IEDM).

The International Technology Roadmap for Semiconductors recognizes indium gallium arsenide MOSFETs, in combination with germanium MOSFETs, as a potential follow-up to silicon.


Source:Ieee

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