Aluminium films have been produced successfully on gallium arsenide wafers by the new technique of ion bombardment. This involves bombarding the substrate, which is in low-resistance electrical contact with the target, with charged particles of thermally evaporated aluminium produced in the ion source, and depositing the film without any thermal effect. The problems of the technique are discussed. The mechanism of ion bombardment (by ions produced from gas molecules) and mechanisms determining the target current have been investigated.
It is shown that, by this method combined with prebombardment by helium ions, pure aluminium films with any desired characteristics can be prepared on atomically idealized (clean) surfaces of gallium arsenide wafers under controlled conditions.
Source:IOPscience
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