2018年5月8日星期二

Stimulated emission from gallium arsenide excited by high-voltage pulses

Narrowing of luminescence band to 1.5 nm and an increase in its intensity by several orders of magnitude were observed when plane-parallel gallium arsenide samples, placed in a flat resonator, were excited with high-voltage pulses. The power and divergence of the stimulated radiation were estimated. It was established that the orientation of dark lines and breakdown channels generally did not agree with the directions of propagation of streamers in gallium arsenide single crystals.


Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,