2017年8月10日星期四

Magnetoelectric effect in layered structures of amorphous ferromagnetic alloy and gallium arsenide

Highlights

Theoretical modeling of ME interaction was conducted.
Experimental dependencies in the resonance range were done.
Maximal ME effect of gallium arsenide was observed.

Abstract

A paper devotes to theoretical and experimental studying the magnetoelectric interaction in layered structures of amorphous ferromagnetic alloy and single- crystal gallium arsenide.
The authors investigated the magnetoelectric effect in the (100) plane of gallium arsenide in the electromechanical resonance range of 200–240 kHz and obtained maximal ME voltage coefficient of 120 V/A at bias field equaled 3.6 kA/m for the direction parallel to the [011] axis. Also the magnetoelectric effect in the (110) and (111) planes is discussed. The results can be used for design of new electronic devices based on the magnetostrictive-semiconductor materials.

Keywords

Magnetoelectric interaction
Gallium arsenide
Metglas
Electromechanical resonance
Source:ILEDinside

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