Gallium arsenide is the most important of the class of semiconducting compounds made by combining elements in groups III and V of the periodic table. Early work on these compounds suggested that gallium arsenide was the material most likely to yield a range of devices capable of operating at higher ambient temperatures and higher powers than was possible with germanium or silicon. A comparison of the properties of silicon, germanium and gallium arsenide is made in table 1, from which it can be seen that gallium arsenide has the highest energy gap and has also a high electron mobility.
Keywords:Gallium arsenide,


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