2016年7月29日星期五

Quantum efficiency dependence on built-in electric fields in exponential-doped and graded-doped gallium arsenide photocathodes

Abstract

We calculated the intensities and widths of the built-in electric fields of exponential-doped and graded-doped gallium arsenide (GaAs) photocathode for the first time. We analyzed the quantum efficiency (QE)for both samples with these two factors, along with the absorption coefficient and found out that although the exponential-doped sample was more complicated in structure than the graded-doped sample, the QE was not enhanced in the full experimental waveband as we expected, especially for those electrons with lower energy. It shows that the escape probability and diffusion length mainly depend on the intensity of the electric fields, which is believed the most decisive factor for the QE enhancement.

Keywords

  • Quantum efficiency
  • Built-in electric field
  • Gallium arsenide
  • Photocathode
      • Source: Sciencedirect
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