2016年7月13日星期三

A study on aberrations in energy band gap of quantum confined gallium arsenide spherical nanoparticles

Highlights

The band gap depends on the ratio of effective mass of electrons to holes.
The effective mass ratio changes in the quantum confined nanoparticles.
This ratio decreases with increasing particle size within quantum confined regime.

Abstract

The present paper reports the energy band gap behaviour in quantum confined gallium arsenide (GaAs) nanoparticles. GaAs spherical nanoparticles were formed by highly energetic and high fluence ions of GaAs in argon plasma generated in a modified dense plasma focus device. The energy band gaps of these nanoparticles having size in the range of 6-13 nm were obtained from optical absorption spectra experimentally and then compared with the theoretically expected values of band gap. A deviation in energy band gap has been observed. This deviation has been attributed to non-spherical shape of nanoparticles in the literature. Instead, we have found that for spherical nanoparticles the observed deviation is because of change in effective mass ratio of electrons and holes.

Keywords

  • Nanoparticles
  • Deposition
  • Semiconductor
  • Effective mass ratio
  • Energy band gap
      • Source: Sciencedirect
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