Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Current–voltage (I–V) and R₀A curves and spectral response as a function of bias voltage and temperature of p–n indium gallium arsenide antimonide (In_0.14Ga_0.86As_0.13Sb_0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.

Keywords

• InGaAsSb semiconductors; 
• Infrared photodetectors; 
• Photodiode spectral response;
• Photodiode electrical characterization
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    • SOURCE:SCIENCEDIRECT
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